IPN70R1K4P7SATMA1 vs IPD70R1K4P7SAUMA1 Vergleich
Detaillierter Direktvergleich von IPN70R1K4P7SATMA1 von Infineon und IPD70R1K4P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN70R1K4P7SATMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | — |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (CoolMOS P7) |
| Gehäuse | PG-SOT223 (3-pin + tab, surface mount) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | — |
| Configuration | Single with built-in diode | — |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (100% avalanche tested) |
| ESD Protection | — | Integrated (per datasheet) |