IPN70R1K4P7SATMA1 vs IPN60R2K0PFD7SATMA1 Vergleich
Detaillierter Direktvergleich von IPN70R1K4P7SATMA1 von Infineon und IPN60R2K0PFD7SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN70R1K4P7SATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | CoolMOS PFD7 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | 600 V |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.8 nC @ 10 V (per UTMel listing) |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | CoolMOS superjunction |
| Gehäuse | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | [DATA_NEEDED: operating temperature range] |
| Configuration | Single with built-in diode | — |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| RoHS-Status | Compliant | Compliant (per Newark listing) |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Channel Type | — | N-Channel |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |