IPN70R1K4P7SATMA1 vs IPN70R2K0P7SATMA1 Vergleich
Detaillierter Direktvergleich von IPN70R1K4P7SATMA1 von Infineon und IPN70R2K0P7SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN70R1K4P7SATMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | — |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.5 V (typical) |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (SJ) N-Channel MOSFET |
| Gehäuse | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223 (3 leads + tab) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | -55 °C to +150 °C |
| Configuration | Single with built-in diode | — |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| RoHS-Status | Compliant | Compliant (ROHS3) |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Part Family | — | CoolMOS P7 |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 3 A |
| Power Dissipation (PD, Tc=25°C) | — | 6 W |
| On-Resistance (RDS(on)) | — | 2.0 Ω (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | — | ±20 V |
| Integrated ESD Diode | — | Yes |