IPN70R1K4P7SATMA1 vs IPN70R2K0P7SATMA1 Comparación
Comparación detallada lado a lado de IPN70R1K4P7SATMA1 por Infineon y IPN70R2K0P7SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPN70R1K4P7SATMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | — |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.5 V (typical) |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (SJ) N-Channel MOSFET |
| Encapsulado | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223 (3 leads + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55 °C to +150 °C |
| Configuration | Single with built-in diode | — |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| Estado RoHS | Compliant | Compliant (ROHS3) |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Part Family | — | CoolMOS P7 |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 3 A |
| Power Dissipation (PD, Tc=25°C) | — | 6 W |
| On-Resistance (RDS(on)) | — | 2.0 Ω (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | — | ±20 V |
| Integrated ESD Diode | — | Yes |