IPN80R1K2P7ATMA1 vs IPD80R1K4P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN80R1K2P7ATMA1 von Infineon und IPD80R1K4P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN80R1K2P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family / Series | CoolMOS P7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | N-Channel Superjunction |
| Gehäuse | SOT-223 (3-pin, 2 + tab) | PG-TO252-2 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C (TJ) | — |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Verlustleistung (Ptot) | — | 32 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Pin-Anzahl | — | 3 (Gate, Drain/Tab, Source) |
| RoHS-Status | — | Compliant |
| REACH Status | — | Compliant |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |