IPP037N08N3GXKSA1 vs IPP045N10N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPP037N08N3GXKSA1 von Infineon und IPP045N10N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP037N08N3GXKSA1 IPP045N10N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,32 $2,20
FET Type N-Channel —
Technology MOSFET (Metal Oxide) - OptiMOS™ 3 OptiMOS 3
Drain to Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 100 A —
RDS(on) Max @ VGS=10V 3.75 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 6 V, 10 V —
Power Dissipation (Pd) @ Tc=25°C 214 W —
Gehäuse PG-TO220-3 (Through Hole) TO-220-3 (PG-TO220-3) through-hole
Montageart Through Hole Through Hole
Pin-Anzahl 3 —
Betriebstemperaturbereich -55°C to +175°C (junction) -55 °C to +175 °C (junction, typical MOSFET limit)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ @ VGS=10V] —
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
RoHS-Status Compliant Compliant (per LCSC datasheet excerpt)
Manufacturer — Infineon Technologies
Part Number — IPP045N10N3GXKSA1
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C — 100 A
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C — [DATA_NEEDED: I_D at TC=100C]
Pulsed Drain Current (I<sub>D,pulse</sub>) — 137 A
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V — 4.5 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 3.5 V (typical, per LCSC listing)
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C — 214 W
Lead-Free — Yes (Infineon G/GX part suffix)
MSL-Level — N/A (through-hole package)

Datenblätter & Ressourcen

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