IPP037N08N3GXKSA1 vs IPP045N10N3GXKSA1 对比
详细并排对比 IPP037N08N3GXKSA1 出自 Infineon 和 IPP045N10N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP037N08N3GXKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.32 | $2.20 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 | OptiMOS 3 |
| Drain to Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A | — |
| RDS(on) Max @ VGS=10V | 3.75 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | — |
| Power Dissipation (Pd) @ Tc=25°C | 214 W | — |
| 封装 | PG-TO220-3 (Through Hole) | TO-220-3 (PG-TO220-3) through-hole |
| 安装类型 | Through Hole | Through Hole |
| 引脚数量 | 3 | — |
| 工作温度范围 | -55°C to +175°C (junction) | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| RoHS 状态 | Compliant | Compliant (per LCSC datasheet excerpt) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPP045N10N3GXKSA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| MSL 等级 | — | N/A (through-hole package) |