IPP037N08N3GXKSA1 vs IPP045N10N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP037N08N3GXKSA1 by Infineon and IPP045N10N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ ActiveSpecification Comparison
| Parameter | IPP037N08N3GXKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $2.20 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 | OptiMOS 3 |
| Drain to Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A | — |
| RDS(on) Max @ VGS=10V | 3.75 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | — |
| Power Dissipation (Pd) @ Tc=25°C | 214 W | — |
| Package | PG-TO220-3 (Through Hole) | TO-220-3 (PG-TO220-3) through-hole |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 | — |
| Operating Temperature Range | -55°C to +175°C (junction) | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| RoHS Status | Compliant | Compliant (per LCSC datasheet excerpt) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPP045N10N3GXKSA1 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| MSL Level | — | N/A (through-hole package) |