IPP069N20NM6AKSA1 vs IPP075N15N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPP069N20NM6AKSA1 von Infineon und IPP075N15N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP069N20NM6AKSA1 IPP075N15N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,10 $1,92
FET Type N-Channel —
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID) at TC=25C 136 A —
Continuous Drain Current (ID) at TA=25C 15.3 A —
Power Dissipation (PD) at TC=25C 300 W —
Power Dissipation (PD) at TA=25C 3.8 W —
On-Resistance RDS(on) max at VGS=10V 6.9 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] —
Betriebstemperaturbereich -55C to +175C [DATA_NEEDED: junction operating temperature range]
Gehäuse PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) PG-TO220-3 (TO-220 through-hole)
Montageart Through Hole Through Hole
Technology OptiMOS 6 trench MOSFET N-Channel MOSFET (OptiMOS 3)
RoHS-Status Compliant —
Lead-Free Yes —
MSL-Level N/A (through-hole package) —
Tab Connection Electrically connected to Drain —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Datenblätter & Ressourcen

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