IPP075N15N3GXKSA1 vs IPB073N15N5ATMA1 Vergleich

Detaillierter Direktvergleich von IPP075N15N3GXKSA1 von Infineon und IPB073N15N5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP075N15N3GXKSA1 IPB073N15N5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,92 $1,82
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 5 (superjunction trench)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Gehäuse PG-TO220-3 (TO-220 through-hole) PG-TO263-3-2 (D2PAK-3L, surface mount)
Montageart Through Hole Surface Mount (SMD)
Betriebstemperaturbereich [DATA_NEEDED: junction operating temperature range] -55°C to +175°C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 114 A
On-Resistance RDS(on) max at VGS=10V — 7.3 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Power Dissition (PD) at Tc=25°C — 214 W
Packaging — Tape and Reel (suffix ATMA1)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)
RoHS-Status — Compliant
Lead-Free — Yes
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

Datenblätter & Ressourcen

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