IPP075N15N3GXKSA1 vs IPB100N12S305ATMA2 Vergleich

Detaillierter Direktvergleich von IPP075N15N3GXKSA1 von Infineon und IPB100N12S305ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP075N15N3GXKSA1 IPB100N12S305ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,92 $1,95
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) —
Drain-Source Voltage (VDS) 150 V 120 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Gehäuse PG-TO220-3 (TO-220 through-hole) —
Montageart Through Hole Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: junction operating temperature range] -55 °C to +175 °C (TJ)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Series — OptiMOS 5 120V
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation (PD) at Tc — 300 W
Drain-Source On-Resistance RDS(on) — 0.0048 ohm (4.8 mΩ) at VGS=10 V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Junction Temperature — 175 °C
Avalanche Energy (EAS) — 1445 mJ
Gehäuse / Bauform — PG-TO263-3-2 (D2PAK)
Automotive Qualification — AEC-Q101 qualified
RoHS-Status — Compliant
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern