IPP075N15N3GXKSA1 vs IPB100N12S305ATMA2 Comparison

Detailed side-by-side comparison of IPP075N15N3GXKSA1 by Infineon and IPB100N12S305ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP075N15N3GXKSA1 IPB100N12S305ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) —
Drain-Source Voltage (VDS) 150 V 120 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Package PG-TO220-3 (TO-220 through-hole) —
Mounting Type Through Hole Surface Mount
Operating Temperature Range [DATA_NEEDED: junction operating temperature range] -55 °C to +175 °C (TJ)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Series — OptiMOS 5 120V
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation (PD) at Tc — 300 W
Drain-Source On-Resistance RDS(on) — 0.0048 ohm (4.8 mΩ) at VGS=10 V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Junction Temperature — 175 °C
Avalanche Energy (EAS) — 1445 mJ
Package / Case — PG-TO263-3-2 (D2PAK)
Automotive Qualification — AEC-Q101 qualified
RoHS Status — Compliant
MSL Level — [DATA_NEEDED: MSL rating]

Datasheets & Resources

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