IPP075N15N3GXKSA1 vs IPT059N15N3ATMA1 Vergleich

Detaillierter Direktvergleich von IPP075N15N3GXKSA1 von Infineon und IPT059N15N3ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP075N15N3GXKSA1 IPT059N15N3ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,92 $2,05
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS™ 3 (trench)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Gehäuse PG-TO220-3 (TO-220 through-hole) PG-HSOF-8-1 (TOLL / TO-Leadless)
Montageart Through Hole Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: junction operating temperature range] -55 °C to +175 °C (TJ max 175 °C)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 150 V
Continuous Drain Current (ID) at TC=25°C — 155 A
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 5.9 mΩ
Power Dissipation (PD) at TC=25°C — 375 W
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg typical]
Pin-Anzahl — 8 + exposed source tab
RoHS-Status — Compliant
MSL-Level — 1
Automotive Qualified — No (industrial grade; non-AEC-Q)

Datenblätter & Ressourcen

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