IPP075N15N3GXKSA1 vs IPT059N15N3ATMA1 对比
详细并排对比 IPP075N15N3GXKSA1 出自 Infineon 和 IPT059N15N3ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPT059N15N3ATMA1 - 150V 5.9mΩ 155A OptiMOS 3 Power MOSFET | Infineon
IPT059N15N3ATMA1 ✓ 量产中规格对比
| 参数 | IPP075N15N3GXKSA1 | IPT059N15N3ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.92 | $2.05 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS™ 3 (trench) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| 封装 | PG-TO220-3 (TO-220 through-hole) | PG-HSOF-8-1 (TOLL / TO-Leadless) |
| 安装类型 | Through Hole | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: junction operating temperature range] | -55 °C to +175 °C (TJ max 175 °C) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 155 A |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 5.9 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 375 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg typical] |
| 引脚数量 | — | 8 + exposed source tab |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | 1 |
| Automotive Qualified | — | No (industrial grade; non-AEC-Q) |