IPP100N12S305AKSA1 vs IPP120N08S403AKSA1 Vergleich

Detaillierter Direktvergleich von IPP100N12S305AKSA1 von Infineon und IPP120N08S403AKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPP100N12S305AKSA1 IPP120N08S403AKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,05 $2,15
Transistortyp N-Channel MOSFET —
Technology OptiMOS trench —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
Gepulster Drain-Strom [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C -55 C to +175 C
Gehäuse TO-220 (PG-TO220-3-1) TO-220-3-1 (PG-TO220-3-1)
Montageart Through Hole Through Hole
Pin-Anzahl 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 120 A
Pulsed Drain Current (bondwire-limited) — 245 A at 25 C
Maximum Power Dissipation (Ptot) — 278 W (Tc)
On-State Resistance (RDS(on)) — 2.8 mOhm typical at VGS=10 V, ID=100 A
Gate Threshold Voltage (VGS(th)) — 4 V max
Total Gate Charge (Qg) — 167 nC
Input Capacitance (Ciss) — 11550 pF
Thermal Resistance, Junction-to-Case (RthJC) — 0.54 K/W
MSL-Level — MSL1 (peak reflow up to 260 C)
Avalanche Rating — 100% avalanche-tested
RoHS-Status — Compliant (Green Product)
Channel Type — N-Channel enhancement mode
Technology Family — OptiMOS

Datenblätter & Ressourcen

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