IPP100N12S305AKSA1 vs IPP120N08S403AKSA1 对比
详细并排对比 IPP100N12S305AKSA1 出自 Infineon 和 IPP120N08S403AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ 量产中
规格对比
| 参数 | IPP100N12S305AKSA1 | IPP120N08S403AKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $2.15 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS trench | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| 脉冲漏极电流 | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| 工作结温 | -55 °C to +175 °C | -55 C to +175 C |
| 封装 | TO-220 (PG-TO220-3-1) | TO-220-3-1 (PG-TO220-3-1) |
| 安装类型 | Through Hole | Through Hole |
| 引脚数量 | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max |
| Total Gate Charge (Qg) | — | 167 nC |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| MSL 等级 | — | MSL1 (peak reflow up to 260 C) |
| Avalanche Rating | — | 100% avalanche-tested |
| RoHS 状态 | — | Compliant (Green Product) |
| Channel Type | — | N-Channel enhancement mode |
| Technology Family | — | OptiMOS |