IPW60R041C6FKSA1 - 600V 77.5A CoolMOS C6 MOSFET | Infineon
Teilenummer: IPW60R041C6FKSA1 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $9.2 | $9,20 |
| 10 | $8.45 | $84,50 |
| 100 | $7.1 | $710,00 |
| 500 | $6.05 | $3.025,00 |
| 1.000 | $5.4 | $5.400,00 |
IPW60R041C6FKSA1 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical energy. Superjunction MOSFETs like the CoolMOS family use a charge-compensated vertical structure that breaks the classic silicon limit between on-resistance and breakdown voltage, enabling lower RDS(on) per unit area than conventional planar MOSFETs. This places the IPW60R041C6FKSA1 in the power MOSFET → superjunction MOSFET → high-voltage switching device hierarchy.
Key features include 600 V drain-source breakdown voltage, 41 mΩ maximum RDS(on) at VGS = 10 V, integrated fast body diode for hard-switched topologies, low gate charge Qg, and excellent dv/dt ruggedness. The device is optimized for hard-switching PFC, CCM PFC, and LLC half-bridge stages where conduction and switching losses both dominate the thermal budget. The avalanche-rated body diode simplifies bridge-tied converter design.
The CoolMOS C6 technology uses a charge-compensation principle with optimized cell pitch, achieving a figure-of-merit (FOM) of RDS(on) × Qg in the range typical for high-frequency PFC stages. Compared with C3-series predecessors, C6 offers reduced gate charge and improved light-load efficiency, which is critical for meeting 80 PLUS and ErP efficiency standards in PC and server SMPS designs.
Typical applications include server and telecom switched-mode power supplies (SMPS), power factor correction (PFC) stages, solar inverters, industrial motor drives, and welding equipment. The wide 600 V rating also suits universal-input (85-265 VAC) PFC and main switching stages in 1-3 kW power supplies.
When designing with this device, attention to gate-drive voltage (recommended 10 V) and PCB layout inductance is critical. The TO-247 package allows robust through-hole mounting with screw heatsinks, but the thermal pad and creepage distances must be observed for high-voltage isolation. A small RC snubber (typically 10-100 Ω + 1-10 nF) is recommended at the drain node to suppress ringing caused by package and circuit inductance in hard-switched bridges.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers accelerate their high-voltage power supply design cycle.
Drop-in-Alternativen für IPW60R041C6FKSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPW60R041C6FKSA1 (gleiche Bauform und Footprint) – abweichend in Technology, Package, Operating Temperature Range, Manufacturer, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPW60R041C6FKSA1
✅ Drop-In✓ Auf Lager
$5.4 / Stück
Datenblatt ansehen →IPW60R080P7XKSA1
✅ Drop-In✓ Auf Lager
$2.65 / Stück
Datenblatt ansehen →IPP60R180P7XKSA1
✅ Drop-In✓ Auf Lager
$1.3 / Stück
Datenblatt ansehen →IPP147N12N3GXKSA1
✅ Drop-In✓ Auf Lager
$1.62 / Stück
Datenblatt ansehen →IRFP2907PBF
✅ Drop-In✓ Auf Lager
$2.45 / Stück
Datenblatt ansehen →IPW60R041C6FKSA1 Grenzwerte & elektrische Eigenschaften
| Technology | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | 481 W |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical |
| Betriebstemperaturbereich | -55°C to +150°C |
| Gehäuse | PG-TO247-3-1 (TO-247-3) |
| Montageart | Through Hole |
| MSL-Level | Not Applicable (Through-hole) |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
IPW60R041C6FKSA1 Pin-Konfiguration
| Pin 1 | Gate — Gate drive input (standard 10V recommended) |
| Pin 2 | Drain — Drain connection (also connected to metal tab) |
| Pin 3 | Source — Source connection (power return) |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
IPW60R041C6FKSA1 ist geeignet für 6 Anwendungs: Server & Telecom SMPS, Power Factor Correction (PFC) Stage, Solar Inverters, Industrial Motor Drives, Welding Equipment, EV Charging Stations.
Server & Telecom SMPS
The IPW60R041C6FKSA1 fits server and telecom SMPS designs requiring 600 V breakdown voltage and high efficiency in hard-switched bridge topologies. With 41 mΩ RDS(on) at VGS=10V and 77.5 A continuous drain current, this MOSFET minimizes conduction loss in the main switching stage of 1-3 kW power supplies. In a typical CCM PFC + LLC architecture, the C6 device replaces earlier planar MOSFETs to meet 80 PLUS Titanium efficiency targets. The through-hole TO-247-3 package enables direct screw-mount heatsinking for sustained 481 W dissipation at industrial ambient temperatures.
Empfohlen
Power Factor Correction (PFC) Stage
The IPW60R041C6FKSA1 is widely used in continuous-conduction-mode (CCM) PFC boost stages operating from universal-input 85-265 VAC mains. The 600 V drain-source rating provides adequate margin above the 400 V DC-link, while the integrated fast body diode handles the boost-rectifier function without external anti-parallel diodes. The 41 mΩ RDS(on) keeps conduction loss below 1% at full load, helping designs meet ENERGY STAR and 80 PLUS efficiency standards. CoolMOS C6 technology delivers a favorable RDS(on)×Qg figure-of-merit that balances conduction and switching losses across the load range.
Empfohlen
Solar Inverters
The IPW60R041C6FKSA1 suits solar inverter applications including string inverters and micro-inverters operating at 400 V DC-link voltages. Its 600 V breakdown rating tolerates voltage transients from inductive kickback and grid-side disturbances, while the 77.5 A current rating supports inverter power levels up to approximately 5 kW in interleaved configurations. The TO-247-3 through-hole package simplifies thermal management with conventional clip-mount heatsinks, essential for outdoor solar inverter enclosures where ambient temperatures can exceed 60°C. Avalanche ruggedness ensures reliable operation under varying irradiance load steps.
Empfohlen
Industrial Motor Drives
The IPW60R041C6FKSA1 serves as the high-side or low-side switch in 3-phase inverter bridges driving industrial motors up to approximately 5 HP. The 600 V rating handles rectified 380-480 VAC industrial mains with 2x safety margin, and the 77.5 A continuous current supports motor peak currents during transient acceleration. The integrated fast body diode provides reliable freewheeling current path during PWM commutation, reducing dead-time requirements. Through-hole TO-247-3 mounting enables robust attachment to aluminum heatsink plates in industrial enclosures subject to vibration.
Empfohlen
Welding Equipment
The IPW60R041C6FKSA1 is suitable for inverter-based welding power supplies operating at 20-50 kHz switching frequencies. The CoolMOS C6 technology's low gate charge and fast switching capability reduce switching losses in the resonant converter topology typical of arc welders. The 41 mΩ RDS(on) handles peak welding currents up to several hundred amps in pulse mode while maintaining acceptable conduction losses. The TO-247-3 package's high power dissipation capability (481 W) and mechanical robustness suit the harsh electrical and thermal environment of welding equipment.
Empfohlen
EV Charging Stations
The IPW60R041C6FKSA1 can be used in Level 2 EV charging station PFC and isolated DC-DC converter stages. The 600 V rating meets the requirements of 400 V EV battery packs, and the 41 mΩ RDS(on) ensures high efficiency during continuous full-power charging sessions. The device's avalanche ruggedness and high peak current capability handle the inrush and short-circuit conditions typical of EV charging applications. For new designs, consider the P7 series for improved efficiency and thermal performance in compact charger form factors.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPW60R041C6FKSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPW60R080P7XKSA1 | IPP60R180P7XKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO247-3-1 (TO-247-3) | PG-TO247-3-1 (TO-247-3) - same | PG-TO247-3-1 (TO-247-3) - same | PG-TO247-3-1 (TO-247-3) - same |
| Technology | CoolMOS C6 | CoolMOS P7 | CoolMOS P7 | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 120 V |
| RDS(on) at VGS=10V | 41 mΩ | 80 mΩ | 180 mΩ | 14.7 mΩ |
| Lifecycle Status | NRND | Active | Active | Active |
| Recommended for New Designs | No (NRND) | Yes | Yes | Yes (low-voltage apps) |
Wichtigste Unterscheidungsmerkmale
- Industry-standard CoolMOS C6 technology with proven reliability (vs. Generic Chinese-brand 600V MOSFETs)
- Optimized RDS(on)×Qg figure-of-merit for hard-switched PFC (vs. IPW60R080P7XKSA1 (CoolMOS P7))
- Through-hole TO-247-3 mounting for robust industrial assembly (vs. Surface-mount MOSFETs in D2PAK or QFN)
Designhinweise
The TO-247-3 package dissipates up to 481 W at Tc=25°C, but thermal resistance from junction to ambient (RθJA) is typically 40-62°C/W without a heatsink. Estimated: at 481 W with 62°C/W RθJA, junction temperature would exceed 25,000°C - clearly impossible. Practical operation requires a heatsink with thermal resistance below 0.2°C/W to keep Tj below 125°C at 100 W dissipation. Use thermal interface material rated for >3 W/mK conductivity and ensure the mounting screw provides 0.5-1.0 N·m torque for optimal thermal contact.
For through-hole TO-247 designs, minimize the drain-node copper area to reduce parasitic inductance that causes voltage spikes during switching. Use a star-ground topology connecting the source lead directly to the gate-driver ground via the shortest possible path. Estimated: 1 inch of PCB trace adds approximately 15-20 nH inductance, which at 10 A/µs di/dt generates 150-200 V spikes. Place a 10-100 Ω + 1-10 nF RC snubber across drain-source if ringing exceeds 80% of VDS rating during prototyping.
Critical pitfalls when using the IPW60R041C6FKSA1: (1) Exceeding ±20 V VGS absolute maximum will destroy the gate oxide - always use a gate-drive clamp or Zener protection. (2) Operating above 481 W power dissipation or beyond the SOA curve causes thermal failure. (3) Since this part is NRND, ensure your BOM includes a second-source alternative like the IPW60R080P7XKSA1 for long-term supply continuity. (4) Do not use the device at VDS > 480 V continuously without adequate derating for transient voltage spikes from transformer leakage inductance.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Industrial-grade - not AEC-Q100 qualified for automotive use. Lead-free (Pb-free) plating on leads. Halogen-free status not explicitly confirmed in available data.
