IPP200N15N3GXKSA1 vs IPP147N12N3GXKSA1 Vergleich
Detaillierter Direktvergleich von IPP200N15N3GXKSA1 von Infineon und IPP147N12N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
IPP200N15N3GXKSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPP200N15N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,79 | $1,62 |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID max, Tc) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on) max) | 20 mOhm at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Total Power Dissipation (Ptot max, Tc=25C) | 150 W | — |
| Technology | OptiMOS 3 | OptiMOS 3 trench MOSFET |
| Channel Type | N-Channel | — |
| Gehäuse | TO-220-3 (PG-TO220-3), through-hole | PG-TO220-3 (through-hole) |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +175 C | — |
| Montageart | Through Hole | Through Hole |
| RoHS-Status | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| MSL-Level | Not Applicable (through-hole) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Transistortyp | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) at Tc=25C | — | 56 A |
| Continuous Drain Current (Id) at Ta | — | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | — | 107 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj max and operating range] |
| Anzahl der Pins | — | 3 (3+Tab) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | — | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | — | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | — | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Qualification | — | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | — | Tube |