IPP200N15N3GXKSA1 vs IPP147N12N3GXKSA1 Comparaison
Comparaison détaillée côte à côte de IPP200N15N3GXKSA1 par Infineon et IPP147N12N3GXKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
IPP200N15N3GXKSA1 ✓ Actif
Comparaison des spécifications
| Paramètre | IPP200N15N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,79 | $1,62 |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID max, Tc) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on) max) | 20 mOhm at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Total Power Dissipation (Ptot max, Tc=25C) | 150 W | — |
| Technology | OptiMOS 3 | OptiMOS 3 trench MOSFET |
| Channel Type | N-Channel | — |
| Boîtier | TO-220-3 (PG-TO220-3), through-hole | PG-TO220-3 (through-hole) |
| Plage de température de jonction en fonctionnement | -55 C to +175 C | — |
| Type de montage | Through Hole | Through Hole |
| Statut RoHS | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| Niveau MSL | Not Applicable (through-hole) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Type de transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) at Tc=25C | — | 56 A |
| Continuous Drain Current (Id) at Ta | — | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | — | 107 W |
| Plage de température de fonctionnement | — | [DATA_NEEDED: Tj max and operating range] |
| Nombre de broches | — | 3 (3+Tab) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | — | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | — | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | — | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Qualification | — | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | — | Tube |