IPP200N15N3GXKSA1 vs IPP147N12N3GXKSA1 Сравнение
Подробное сравнение бок о бок IPP200N15N3GXKSA1 от Infineon и IPP147N12N3GXKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
IPP200N15N3GXKSA1 ✓ АктивенInfineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 ✓ АктивенСравнение характеристик
| Параметр | IPP200N15N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,79 | $1,62 |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID max, Tc) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on) max) | 20 mOhm at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Total Power Dissipation (Ptot max, Tc=25C) | 150 W | — |
| Technology | OptiMOS 3 | OptiMOS 3 trench MOSFET |
| Channel Type | N-Channel | — |
| Корпус | TO-220-3 (PG-TO220-3), through-hole | PG-TO220-3 (through-hole) |
| Диапазон рабочей температуры перехода | -55 C to +175 C | — |
| Тип монтажа | Through Hole | Through Hole |
| Статус RoHS | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| Уровень MSL | Not Applicable (through-hole) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Тип транзистора | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) at Tc=25C | — | 56 A |
| Continuous Drain Current (Id) at Ta | — | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | — | 107 W |
| Диапазон рабочих температур | — | [DATA_NEEDED: Tj max and operating range] |
| Количество выводов | — | 3 (3+Tab) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | — | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | — | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | — | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Qualification | — | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | — | Tube |