IPP60R190P6XKSA1 vs IPA60R190C6XKSA1 Vergleich
Detaillierter Direktvergleich von IPP60R190P6XKSA1 von Infineon und IPA60R190C6XKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP60R190P6XKSA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | CoolMOS C6 |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Gehäuse | PG-TO220-3 (through-hole) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Montageart | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55C to +150C |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typ] |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |