IPP60R190P6XKSA1 vs IPA60R190C6XKSA1 Comparison
Detailed side-by-side comparison of IPP60R190P6XKSA1 by Infineon and IPA60R190C6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP60R190P6XKSA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | CoolMOS C6 |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Package | PG-TO220-3 (through-hole) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Mounting Type | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typ] |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |