IPT059N15N3ATMA1 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von IPT059N15N3ATMA1 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPT059N15N3ATMA1 - 150V 5.9mΩ 155A OptiMOS 3 Power MOSFET | Infineon
IPT059N15N3ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPT059N15N3ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,82 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 3 (trench) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) max | 150 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 155 A | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 5.9 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 375 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg typical] | — |
| Gehäuse | PG-HSOF-8-1 (TOLL / TO-Leadless) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ max 175 °C) | — |
| Pin-Anzahl | 8 + exposed source tab | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | — |
| Automotive Qualified | No (industrial grade; non-AEC-Q) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |