IPT059N15N3ATMA1 vs BSC076N04NDATMA1 对比
详细并排对比 IPT059N15N3ATMA1 出自 Infineon 和 BSC076N04NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPT059N15N3ATMA1 - 150V 5.9mΩ 155A OptiMOS 3 Power MOSFET | Infineon
IPT059N15N3ATMA1 ✓ 量产中规格对比
| 参数 | IPT059N15N3ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $0.82 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS™ 3 (trench) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) max | 150 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 155 A | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 5.9 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 375 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg typical] | — |
| 封装 | PG-HSOF-8-1 (TOLL / TO-Leadless) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C (TJ max 175 °C) | — |
| 引脚数量 | 8 + exposed source tab | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| Automotive Qualified | No (industrial grade; non-AEC-Q) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作结温 | — | -55 C to +175 C |
| 封装 / 外壳 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |