IPT059N15N3ATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPT059N15N3ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT059N15N3ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology OptiMOS™ 3 (trench) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) max 150 V 40 V
Continuous Drain Current (ID) at TC=25°C 155 A —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ —
Power Dissipation (PD) at TC=25°C 375 W —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical] —
Package PG-HSOF-8-1 (TOLL / TO-Leadless) —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C (TJ max 175 °C) —
Pin Count 8 + exposed source tab —
RoHS Status Compliant —
MSL Level 1 —
Automotive Qualified No (industrial grade; non-AEC-Q) —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Operating Junction Temperature — -55 C to +175 C
Package / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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