IQD020N10NM5CGSCATMA1 vs IQDH35N03LM5SCATMA1 Vergleich
Detaillierter Direktvergleich von IQD020N10NM5CGSCATMA1 von Infineon und IQDH35N03LM5SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ AktivInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQD020N10NM5CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,20 | $2,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 100V (IQD series) | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 276 A | — |
| Continuous Drain Current (ID, Ta) | 26 A | — |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | — |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | — |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | — |
| Input Capacitance (Ciss) | 7.3 nF | — |
| Output Capacitance (Coss) | 1 nF | — |
| Reverse Transfer Capacitance (Crss) | 42 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | — |
| Technology | — | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| MSL-Level | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |