IQD020N10NM5CGSCATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQD020N10NM5CGSCATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD020N10NM5CGSCATMA1
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 β ActiveInfineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQD020N10NM5CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.20 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 100V (IQD series) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 276 A | β |
| Continuous Drain Current (ID, Ta) | 26 A | β |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | β |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | β |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | β |
| Input Capacitance (Ciss) | 7.3 nF | β |
| Output Capacitance (Coss) | 1 nF | β |
| Reverse Transfer Capacitance (Crss) | 42 pF | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | β |
| Technology | β | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta | β | 66 A |
| Pulsed Drain Current (IDM) at Tc | β | 700 A |
| On-State Resistance (RDS(on)) max | β | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 278 W |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL Level | β | 1 (unlimited) |
| Marking | β | IQDH35N03LM5S |