IQD020N10NM5CGSCATMA1 vs IQDH35N03LM5SCATMA1 对比
详细并排对比 IQD020N10NM5CGSCATMA1 出自 Infineon 和 IQDH35N03LM5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQD020N10NM5CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.20 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 100V (IQD series) | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 276 A | — |
| Continuous Drain Current (ID, Ta) | 26 A | — |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | — |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | — |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | — |
| Input Capacitance (Ciss) | 7.3 nF | — |
| Output Capacitance (Coss) | 1 nF | — |
| Reverse Transfer Capacitance (Crss) | 42 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | — |
| Technology | — | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| 工作温度范围 | — | -55 C to +175 C |
| MSL 等级 | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |