IQDH29NE2LM5CGSCATMA1 vs IQE022N06LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQDH29NE2LM5CGSCATMA1 von Infineon und IQE022N06LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $2,05 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 Power-Transistor | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Gehäuse | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9 (5x6 mm) |
| Pin-Anzahl | 9 | 9 (PG-WHTFN-9) |
| Montageart | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (TC) | — | 151 A |
| Continuous Drain Current (TA) | — | 24 A |
| Maximum Power Dissipation (TC) | — | 100 W |
| Maximum Power Dissipation (TA) | — | 2.5 W |
| RDS(on) Maximum at VGS=10V | — | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Betriebstemperaturbereich | — | -55C to +150C |
| Technology Family | — | OptiMOS 5 |