IQDH29NE2LM5CGSCATMA1 vs IQE022N06LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQE022N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon
IQDH29NE2LM5CGSCATMA1 β ActiveInfineon
IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon
IQE022N06LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.84 | $2.05 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 Power-Transistor | β |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (Ta) | 75 A | β |
| Continuous Drain Current (Tc) | 789 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 278 W | β |
| Maximum On-Resistance RDS(on) | 0.29 mΞ© | β |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | β |
| Package | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9 (5x6 mm) |
| Pin Count | 9 | 9 (PG-WHTFN-9) |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (TC) | β | 151 A |
| Continuous Drain Current (TA) | β | 24 A |
| Maximum Power Dissipation (TC) | β | 100 W |
| Maximum Power Dissipation (TA) | β | 2.5 W |
| RDS(on) Maximum at VGS=10V | β | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 2.3 V (typ) |
| Operating Temperature Range | β | -55C to +150C |
| Technology Family | β | OptiMOS 5 |