IQE004NE1LM7CGATMA1 vs IQE020N04LM6CGATMA1 Vergleich

Detaillierter Direktvergleich von IQE004NE1LM7CGATMA1 von Infineon und IQE020N04LM6CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktiv
Infineon
IQE020N04LM6CGATMA1 IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQE004NE1LM7CGATMA1 IQE020N04LM6CGATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,06 $1,75
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 OptiMOS 6
Technology N-Channel Trench Power MOSFET OptiMOS 6, TrenchFET-class
Drain-Source Voltage (VDS) 15 V 40 V
Continuous Drain Current (ID, TA=25C) 58 A —
Continuous Drain Current (ID, TC=25C) 379 A —
Power Dissipation (TA=25C) 2.1 W —
Power Dissipation (TC=25C) 89 W —
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Gehäuse PG-TTFN-9-3 (surface mount) PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate)
Montageart Surface Mount Surface Mount
Betriebstemperatur -55C to +150C (junction) —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
Packaging Tape & Reel (CGATMA1 suffix) —
Polarization N-Channel —
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 25 A
Continuous Drain Current (ID) at TC=25°C — 166 A
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 107 W
On-State Resistance (RDS(on)) typical @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) typical — [DATA_NEEDED: Qg value]
Betriebstemperaturbereich — -55°C to +150°C
Configuration — Single N-Channel, source-down

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern