IQE012N03LM5CGATMA1 vs IQE013N04LM6ATMA1 Vergleich
Detaillierter Direktvergleich von IQE012N03LM5CGATMA1 von Infineon und IQE013N04LM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE012N03LM5CGATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,38 | $0,71 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| Technology / Process | OptiMOS 5 trench | — |
| Gehäuse | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Technology | — | OptiMOS N-channel trench MOSFET |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |