IQE012N03LM5CGSCATMA1 vs BSC009NE2LS5IATMA1 Vergleich
Detaillierter Direktvergleich von IQE012N03LM5CGSCATMA1 von Infineon und BSC009NE2LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktivInfineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE012N03LM5CGSCATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $1,02 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS™ 5 (25V/30V family) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) @ Ta | 34 A | — |
| Continuous Drain Current (ID) @ Tc | 224 A | — |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | — |
| Gehäuse | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| MSL-Level | 1 (per JEDEC J-STD-020, floor life unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer Part Number | — | BSC009NE2LS5IATMA1 |
| Manufacturer | — | Infineon Technologies |
| Transistortyp | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | — | 25 V |
| Gate-Source Voltage (V_GS) max | — | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | — | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | — | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | — | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | — | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | — | 2.5 W |
| Power Dissipation (P_D) @ T_C | — | 74 W |
| Total Gate Charge (Q_G) typ | — | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | — | 3200 pF |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Terminal Finish | — | Matte Tin (e3 per JESD-609) |
| Number of Terminals | — | 8 |