IQE012N03LM5CGSCATMA1 vs BSC009NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGSCATMA1 by Infineon and BSC009NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGSCATMA1
IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 β ActiveInfineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGSCATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.02 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOSβ’ 5 (25V/30V family) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) @ Ta | 34 A | β |
| Continuous Drain Current (ID) @ Tc | 224 A | β |
| Maximum RDS(on) @ VGS=10V | 1.15 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | β |
| Package | PG-WHTFN-9-1 (PQFN 3.3 Γ 3.3 mm Source-Down dual-side cooled) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| MSL Level | 1 (per JEDEC J-STD-020, floor life unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer Part Number | β | BSC009NE2LS5IATMA1 |
| Manufacturer | β | Infineon Technologies |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | β | 25 V |
| Gate-Source Voltage (V_GS) max | β | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | β | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | β | 0.95 mΞ© |
| Continuous Drain Current (I_D) @ T_A=25Β°C | β | 40 A |
| Continuous Drain Current (I_D) @ T_C=25Β°C | β | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | β | 2.5 W |
| Power Dissipation (P_D) @ T_C | β | 74 W |
| Total Gate Charge (Q_G) typ | β | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | β | 3200 pF |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Terminal Finish | β | Matte Tin (e3 per JESD-609) |
| Number of Terminals | β | 8 |