IQE013N04LM6ATMA1 vs IAUA220N08S5N021AUMA1 Vergleich
Detaillierter Direktvergleich von IQE013N04LM6ATMA1 von Infineon und IAUA220N08S5N021AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktivInfineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE013N04LM6ATMA1 | IAUA220N08S5N021AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $2,45 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS-5 (75V-120V family) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Gehäuse | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-HSOF-5-4 (7x8 mm²) |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55C to +175C (Tj) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | — | 2.1 mΩ at 10 V V_GS |
| Power Dissipation (P_D, Tc) | — | 211 W |
| Gate-Source Voltage (V_GS max) | — | [DATA_NEEDED: V_GS max absolute rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL-Level | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at V_GS=10V] |
| Output Capacitance (C_oss) | — | [DATA_NEEDED: C_oss typical] |
| Thermal Resistance (R_thJC) | — | [DATA_NEEDED: junction-to-case thermal resistance] |