IQE013N04LM6ATMA1 vs IAUA220N08S5N021AUMA1 对比

详细并排对比 IQE013N04LM6ATMA1 出自 Infineon 和 IAUA220N08S5N021AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA220N08S5N021AUMA1 IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 ✓ 量产中

规格对比

参数 IQE013N04LM6ATMA1 IAUA220N08S5N021AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $2.45
Technology OptiMOS N-channel trench MOSFET OptiMOS-5 (75V-120V family)
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
封装 PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-HSOF-5-4 (7x8 mm²)
工作温度范围 -55 °C to +175 °C -55C to +175C (Tj)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tj) — 220 A
Static Drain-Source On-Resistance (R_DS(on)) — 2.1 mΩ at 10 V V_GS
Power Dissipation (P_D, Tc) — 211 W
Gate-Source Voltage (V_GS max) — [DATA_NEEDED: V_GS max absolute rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min/max]
Channel Type — N-Channel
Automotive Qualification — AEC-Q101 qualified
MSL 等级 — [DATA_NEEDED: MSL moisture sensitivity level]
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at V_GS=10V]
Output Capacitance (C_oss) — [DATA_NEEDED: C_oss typical]
Thermal Resistance (R_thJC) — [DATA_NEEDED: junction-to-case thermal resistance]

数据手册与资源

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