IQE022N06LM5CGATMA1 vs IRFH5015TRPBF Vergleich
Detaillierter Direktvergleich von IQE022N06LM5CGATMA1 von Infineon und IRFH5015TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE022N06LM5CGATMA1 | IRFH5015TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 | — |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | — |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | — |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | — |
| Power Dissipation (T_A) | 2.5 W | — |
| Power Dissipation (T_C) | 100 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | 8-PQFN (5x6) SuperSO8 |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 9 (with exposed thermal pad) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Betriebstemperatur | — | -55C to +150C (TJ max) |