IQE022N06LM5CGATMA1 vs IRFH5015TRPBF Comparison
Detailed side-by-side comparison of IQE022N06LM5CGATMA1 by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE022N06LM5CGATMA1
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΞ© | Infineon
IQE022N06LM5CGATMA1 β ActiveInfineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β ActiveSpecification Comparison
| Parameter | IQE022N06LM5CGATMA1 | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 5 | β |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | β |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | β |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΞ© | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | β |
| Power Dissipation (T_A) | 2.5 W | β |
| Power Dissipation (T_C) | 100 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | 8-PQFN (5x6) SuperSO8 |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed thermal pad) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TA=25C | β | 10 A |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| On-Resistance (RDS(on)) max | β | 31 mOhm |
| Total Gate Charge (Qg) | β | 33 nC |
| Power Dissipation (TA=25C) | β | 3.6 W |
| Power Dissipation (TC=25C) | β | 156 W |
| Gate Drive Voltage (VGS recommended) | β | 10 V |
| Configuration | β | Single with built-in body diode |
| Operating Temperature | β | -55C to +150C (TJ max) |