IQE022N06LM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE022N06LM5CGSCATMA1 von Infineon und IQE065N10NM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE022N06LM5CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $1,28 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| Gehäuse | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9-1 (Source-Down) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C |
| Technology Family | OptiMOS 5 | — |
| Pin-Anzahl | 9 (PG-WHTFN-9) | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Technology | — | OptiMOS 5 trench-gate |
| Lead-Free | — | Yes |