IQE022N06LM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE022N06LM5CGSCATMA1 by Infineon and IQE065N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE022N06LM5CGSCATMA1

IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon

IQE022N06LM5CGSCATMA1 βœ“ Active
Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE022N06LM5CGSCATMA1 IQE065N10NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $1.28
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (TC) 151 A β€”
Continuous Drain Current (TA) 24 A β€”
Maximum Power Dissipation (TC) 100 W β€”
Maximum Power Dissipation (TA) 2.5 W β€”
RDS(on) Maximum at VGS=10V 2.2 mOhm β€”
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) [DATA_NEEDED: VGS(th) typical value]
Package PG-WHTFN-9 (5x6 mm) PG-WHTFN-9-1 (Source-Down)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55 C to +150 C
Technology Family OptiMOS 5 β€”
Pin Count 9 (PG-WHTFN-9) β€”
MSL Level [DATA_NEEDED: MSL Level] β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25 C β€” 85 A
Continuous Drain Current (ID) at TA β€” 13 A
On-Resistance (RDS(on)) max at VGS=10V β€” 6.5 mOhm
Power Dissipation at TA β€” 2.5 W
Power Dissipation at TC β€” 100 W
Technology β€” OptiMOS 5 trench-gate
Lead-Free β€” Yes

Datasheets & Resources

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