IQE022N06LM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 对比
详细并排对比 IQE022N06LM5CGSCATMA1 出自 Infineon 和 IQE065N10NM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE022N06LM5CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $1.28 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| 封装 | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9-1 (Source-Down) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C | -55 C to +150 C |
| Technology Family | OptiMOS 5 | — |
| 引脚数量 | 9 (PG-WHTFN-9) | — |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Technology | — | OptiMOS 5 trench-gate |
| Lead-Free | — | Yes |