IQE036N08NM6CGATMA1 vs IQD009N06NM5SCATMA1 Vergleich

Detaillierter Direktvergleich von IQE036N08NM6CGATMA1 von Infineon und IQD009N06NM5SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQE036N08NM6CGATMA1 IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 ✓ Aktiv
Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQE036N08NM6CGATMA1 IQD009N06NM5SCATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $1,42
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (Vds) 80 V —
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max] —
Continuous Drain Current (Id) at Tc 118 A —
Continuous Drain Current (Id) at Ta 16.7 A —
Rds(on) max at Vgs=10V 3.6 mOhm —
Gate Threshold Voltage (Vgs(th)) 3.5 V (max) —
Power Dissipation at Tc 125 W —
Power Dissipation at Ta 2.5 W —
Betriebstemperaturbereich -55 C to +175 C (junction, Tj) [DATA_NEEDED: Tj min/max]
Gehäuse PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) PG-WHSON-8-U02 (PQFN 5x6 mm)
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL classification]
RoHS-Status Compliant Compliant
Technology Trench MOSFET, OptiMOS 6 —
Configuration Single N-channel, Source-Down —
Part Series — OptiMOS 5 60V (IQD009N06NM5)
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Ta=25C) — 42 A
Pulsed Drain Current (IDM, Tc) — 445 A
On-Resistance RDS(on) max @ VGS=10V — 0.9 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 333 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS abs max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Tape and Reel Packaging — Yes (suffix SCATMA1)

Datenblätter & Ressourcen

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