IQE036N08NM6CGATMA1 vs IQD009N06NM5SCATMA1 对比
详细并排对比 IQE036N08NM6CGATMA1 出自 Infineon 和 IQD009N06NM5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE036N08NM6CGATMA1 | IQD009N06NM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| 工作温度范围 | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: Tj min/max] |
| 封装 | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL classification] |
| RoHS 状态 | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| Configuration | Single N-channel, Source-Down | — |
| Part Series | — | OptiMOS 5 60V (IQD009N06NM5) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Ta=25C) | — | 42 A |
| Pulsed Drain Current (IDM, Tc) | — | 445 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 0.9 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS abs max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Tape and Reel Packaging | — | Yes (suffix SCATMA1) |