IQE036N08NM6CGATMA1 vs IQD016N08NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQE036N08NM6CGATMA1 von Infineon und IQD016N08NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE036N08NM6CGATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $1,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction, Tj) | -55C to +150C (junction, standard MOSFET rating) |
| Gehäuse | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TSON-8-9 (PQFN 5x6) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 5 Power-MOSFET |
| Configuration | Single N-channel, Source-Down | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 323 A |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |