IQE050N08NM5CGATMA1 vs IQE036N08NM6CGSCATMA1 Vergleich

Detaillierter Direktvergleich von IQE050N08NM5CGATMA1 von Infineon und IQE036N08NM6CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQE050N08NM5CGATMA1 IQE036N08NM6CGSCATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,75 $0,88
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Gehäuse PG-TTFN-9-1 (Surface Mount) —
Montageart Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) Trench MOSFET (OptiMOS 6)
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Betriebstemperatur -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Gehäuse / Bauform — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Betriebstemperaturbereich — -55 C to +150 C (junction, per datasheet derating curves)
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

Datenblätter & Ressourcen

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