IQE065N10NM5CGSCATMA1 vs IQE220N15NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQE065N10NM5CGSCATMA1 von Infineon und IQE220N15NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE065N10NM5CGSCATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,28 | $0,84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4.6 V (typ at 46 µA) |
| Gehäuse | PG-WHTFN-9-1 (Source-Down) | PG-TSON-8-5 (Source-Down) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (OptiMOS 5) |
| Betriebstemperaturbereich | -55 C to +150 C | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Ausgangskonfiguration | — | Single N-Channel |
| Betriebstemperatur | — | -55C to +150C (junction) |
| MSL-Level | — | 1 |