IQE065N10NM5CGSCATMA1 vs IQE220N15NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE220N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 β ActiveInfineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE065N10NM5CGSCATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $0.84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25 C | 85 A | β |
| Continuous Drain Current (ID) at TA | 13 A | β |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | β |
| Power Dissipation at TA | 2.5 W | β |
| Power Dissipation at TC | 100 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4.6 V (typ at 46 Β΅A) |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-TSON-8-5 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (OptiMOS 5) |
| Operating Temperature Range | -55 C to +150 C | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 150 V |
| Continuous Drain Current (ID) at Ta | β | 7 A |
| Continuous Drain Current (ID) at Tc | β | 44 A |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| RDS(on) Max at VGS=10V | β | 22 mΞ© |
| Total Gate Charge (Qg) | β | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | β | 14 pF |
| Output Capacitance (Coss) | β | 340 pF |
| Output Configuration | β | Single N-Channel |
| Operating Temperature | β | -55C to +150C (junction) |
| MSL Level | β | 1 |