IQE220N15NM5CGATMA1 vs IQE065N10NM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE220N15NM5CGATMA1 von Infineon und IQE065N10NM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE220N15NM5CGATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $1,28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 100 V |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at Ta] | — |
| On-State Resistance RDS(on) max | 22 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Gehäuse | PG-TTFN-9-3 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (estimated from Tj max) | -55 C to +150 C |
| Technology | Trench MOSFET, OptiMOS 5 | OptiMOS 5 trench-gate |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Pin-Anzahl | 9 (TTFN) | — |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |