IQE220N15NM5CGATMA1 vs IQE065N10NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE220N15NM5CGATMA1 by Infineon and IQE065N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE220N15NM5CGATMA1

IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5CGATMA1 βœ“ Active
Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE220N15NM5CGATMA1 IQE065N10NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.28
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Tc 44 A β€”
Continuous Drain Current (ID) at Ta [DATA_NEEDED: ID at Ta] β€”
On-State Resistance RDS(on) max 22 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 100 W β€”
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] β€”
Package PG-TTFN-9-3 (Source-Down) PG-WHTFN-9-1 (Source-Down)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (estimated from Tj max) -55 C to +150 C
Technology Trench MOSFET, OptiMOS 5 OptiMOS 5 trench-gate
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Pin Count 9 (TTFN) β€”
Series β€” OptiMOS 5
Continuous Drain Current (ID) at TC=25 C β€” 85 A
Continuous Drain Current (ID) at TA β€” 13 A
On-Resistance (RDS(on)) max at VGS=10V β€” 6.5 mOhm
Power Dissipation at TA β€” 2.5 W
Power Dissipation at TC β€” 100 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Lead-Free β€” Yes

Datasheets & Resources

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