IQEH50NE2LM7UCGSCATMA1 vs IQD020N10NM5CGATMA1 Vergleich

Detaillierter Direktvergleich von IQEH50NE2LM7UCGSCATMA1 von Infineon und IQD020N10NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQEH50NE2LM7UCGSCATMA1 IQD020N10NM5CGATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,78 $1,28
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at TA 54 A —
Continuous Drain Current (ID) at TC 422 A —
RDS(on) Max 0.5 mΩ —
Gate Threshold Voltage (VGS(th)) typ 2 V —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 150 W —
Maximum Junction Temperature 175 °C —
Gehäuse PG-WHTFN-9-1 (surface mount) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Montageart Surface Mount Surface Mount
Series OptiMOS 7 —
Technology Silicon N-Channel Power MOSFET OptiMOS™ 5 N-channel trench MOSFET
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 26 A
Continuous Drain Current (ID) at TC=25°C — [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C — 273 A
Static Drain-Source On-Resistance RDS(on) max — 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 333 W
Betriebstemperaturbereich — -55°C to +175°C
MSL-Level — [DATA_NEEDED: MSL rating from datasheet]
RoHS-Status — Compliant
Qualification — Industrial grade (Infineon OptiMOS™ 5 family)

Datenblätter & Ressourcen

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